Characterization of Silicon Rich Oxides with Tunable Optical Band Gap on Sapphire Substrates by Photoluminescence, UV/Vis and Raman Spectroscopy

Authors

  • Ragnar Kiebach Instituto Nacional de Astrofísica, Óptica y Electrónica
  • Jose Alberto Luna-López Instituto Nacional de Astrofísica, Óptica y Electrónica
  • Guilherme Osvaldo Dias State University of Campinas
  • Mariano Aceves-Mijares Instituto Nacional de Astrofísica, Óptica y Electrónica
  • Jacobus Willibrordus Swart State University of Campinas

DOI:

https://doi.org/10.29356/jmcs.v52i3.1069

Keywords:

silicon rich oxides, optical properties, photoluminiscence

Abstract

A detailed analysis of the optical properties of silicon rich oxides (SRO) thin films and the factors that influence them is presented. SRO films with different Si content were synthesized via LPCVD (low pressure chemical vapor deposition) on sapphire substrates. Photoluminescence (PL), UV/Vis and Raman spectroscopy were used to characterize the samples. An intense emission in blue region was found. An interesting fact is that the optical band gap correlates linearly with the reactants ratio, which allows the tuning of the band gap. The influence of parameters such as substrate, Si content, annealing temperature and annealing time on the optical properties are discussed and the possible mechanisms of the photoluminescence are compared with our experimental data.

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Author Biographies

Guilherme Osvaldo Dias, State University of Campinas

Center for Semiconductor Components

Jacobus Willibrordus Swart, State University of Campinas

Center for Semiconductor Components

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Published

2019-07-31

Issue

Vol. 52 No. 3 (2008): Regular Issue

Section

Regular Articles

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