Point-Defect Chemistry on the Polarization Behavior of Niobium Doped Bismuth Titanate

F. Ambriz-Vargas, R. Zamorano-Ulloa, A. Romero-Serrano, J. Ortiz-Landeros, J. Crespo-Villegas, D. Ramírez-Rosales, C. Gómez-Yáñez


The present work shows the defect chemistry at room temperature of Bi4Ti3O12, emphasizing the effect of point defects on the ferroelectric properties. Electrical measurements of conductivity, dielectric permittivity and dielectric loss as well as structural characterization and Electron Spin Resonance (ESR) were used to deduce the existence of different point defects. Pure and Niobium doped bismuth titanate ceramic were prepared by a conventional solid state reaction technique. Rietveld refinement analysis suggested that niobium atoms occupy the titanium lattice sites and the presence of bismuth vacancies. Electron Spin Resonance measurements showed signals that are associated to iron impurities. The present communication supports the models of compensation mechanisms dominated by free electrons and bismuth vacancies.


Ceramics; Dielectric properties; Point defects; Electrical properties.

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Mikolajick, T.; Dehm, C.; Hartner, W.; Kasko, I.; Kastner, M.J.; Nagel, N.; Moert, M.; Mazure, C.; Microelectronics Reliability 2001, 41, 947-950.

Baldi, L.; Bez, R.; Sandhu, G. Solid-State Electronics 2014, 102, 2-11.

Fabian, A.; Gitanjali, K.; Maxime, B., Azza H.; Rafik N.; Andranik, S.; Reji, T.; Carlos G.Marc, A. G.; Andreas, R. ACS Appl. Mater. Interfaces 2017, 9 (15), 13262–13268.

Jeong, D. S.; Thomas, R.; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, C. S. Rep Prog Phys 2012, 75 (7), 076502.

Kao, M. C.; Chen, H. Z.; Young, S. L.; Chuang, B. N.; Jiang, W. W.; Song, J. S.; Jhan, S. S.; Chiang, J. L.; Wu, L. T. J. Cryst. Growth 2012, 338 (1), 139-142.

Kohlstedt, H.; Mustafa, Y.; Gerber, A.; Petraru, A.; Fitsilis, M.; Meyer, R.; Böttger, U.; Waser, R. Microelectron. Eng. 2005, 80, 296-304.

Fabian, A.; Ivan, V.; Thomas, R.; Ruediger, A. J. Vac. Sci. Technol., B: Nanotechnol. Microelectron.: Mater., Process., Meas., Phenom. 2016, 34 (2), 02M101.

Kang, S. W. R. J. Mater. Sci.: Mater. Electron. 2004, 2004, 231-234. 9. Makarov, A.; Sverdlov, V.; Selberherr, S. Microelectron. Reliab. 2012, 52 (4), 628-634.

Fabian, A.; Gintanjali, K.; Thomas, R.; Nouar, R.; A. Sarkissian, Carlos, G.; Marc, G.; Ruediger, A. Appl. Phys. Lett. 2017, 110, 093106

Soni, R.; Petraru, A.; Meuffels, P.; Vavra, O.; Ziegler, M.; Kim, S. K.; Jeong, D. S.; Pertsev, N. A.; Kohlstedt, H. Nat Commun 2014, 5, 5414.

Wu, A.; Soares, M. R.; Miranda Salvado, I. M.; Vilarinho, P. M. Mater. Res. Bull. 2012, 47 (11), 3819-3824.

Oliveira, R. C.; Cavalcante, L. S.; Sczancoski, J. C.; Aguiar, E. C.; Espinosa, J. W. M.; Varela, J. A.; Pizani, P. S.; Longo, E. J. Alloys Compd. 2009, 478 (1-2), 661-670.

Martin, L. W.; Chu, Y. H.; Ramesh, R. Mater. Sci. Eng. 2010, 68 (4-6), 89-133.

Noguchi, T. G.; Miyayama, M.; Hoshikawa, A.; Kamiyama, T. J Electroceram 2008, 21, 49-54.

Materlik, R.; Künneth, C.; Kersch, A. J. Appl. Phys. 2015, 117 (13), 134109.

Zhang, L.; Chu, R.; Zhao, S.; Li, G.; Yin, Q. Mater. Sci. Eng: B 2005, 116 (1), 99-103.

Bao, Z.H.; Zhu, J.S.; Wang, J.S. Mater. Lett. 2002, 56, 861– 866.

Lee, S.-Y.; Park, B.-O. J. Cryst. Growth 2005, 283 (1-2), 81-86.

Simões, A. Z.; Aguiar, E. C.; Ries, A.; Longo, E.; Varela, J. A. Mater. Lett. 2007, 61 (2), 588-591.

Nowotny, M. K.; Nowotny, J. J. Phys. Chem. B 2006, 110, 16283-16291.

Laguta, V. V.; Slipenyuk, A. M.; Bykov, I. P.; Glinchuk, M. D.; Maglione, M.; Michau, D.; Rosa, J.; Jastrabik, L. Appl. Phys. Lett. 2005, 87 (2), 022903.

Laguta, V. V.; Slipenyuk, A. M.; Bykov, I. P.; Glinchuk, M. D.; Maglione, M.; Bilous, A. G.; V′yunov, O. I.; Rosa, J.; Jastrabik, L. J. Appl. Phys. 2005, 97 (7), 073707.

Santos, J. C.; Mir, M.; Mastelaro, V.R.; Hernandes, A.C. J. Eur. Ceram. Soc. 2009, 751–756.

Jose, O.; Carlos, G.; Palacios-Romero, C.; Lima, E.; Pfeiffer, H. J Phys Chem A 2012, 116 (12), 3163-71.

Machura, D.; Rymarczyk, J.; Ilczuk, J. Eur. Phys. J.: Spec. Top. 2008, 154 (1), 131-134.

Jardiel, T.; Caballero, A. C.; Fernández, J. F.; Villegas, M. J. Eur. Ceram. Soc. 2006, 26 (13), 2823-2826.

Kim, H. J.; Park, M. H.; Kim, Y. J.; Lee, Y. H.; Jeon, W.; Gwon, T.; Moon, T.; Kim, K. D.; Hwang, C. S. Appl. Phys. Lett. 2014, 105

(19), 192903.

Paredes-Olguín, M.; Lira-Hernández, I. A.; Gómez-Yáñez, C.; Espino-Cortés, F. P. Phys. B 2013, 410, 157-161.

Tao, L. L.; Wang, J. J. Appl. Phys. 2016, 119 (22), 224104.

Park, M. H.; Lee, Y. H.; Kim, H. J.; Kim, Y. J.; Moon, T.; Kim, K. D.; Muller, J.; Kersch, A.; Schroeder, U.; Mikolajick, T.; Hwang, C. S. Adv Mater 2015, 27 (11), 1811-31.

Velasco-Davalos, I.; Ambriz-Vargas, F.; Gómez-Yáñez, C.; Thomas, R.; Ruediger, A. J. Alloys Compd. 2016, 667, 268-274.

Velasco-Davalos, I.; Ambriz-Vargas, F.; Kolhatkar, G.; Thomas, R.; Ruediger, A. AIP Advances 2016, 6 (6), 065117.

Velasco-Davalos, I. A.; Moretti, M.; Nicklaus, M.; Nauenheim, C.; Li, S.; Nechache, R.; Gomez-Yanez, C.; Ruediger, A. Appl. Phys. A: Mater. Sci. Process. 2013, 115 (3), 1081-1085.

Velasco-Davalos, I. A.; Ruediger, A.; Cruz-Rivera, J. J.; Gomez-Yanez, C. J. Alloys Compd. 2013, 581, 56-58.

Yoo, Y. W.; Jeon, W.; Lee, W.; An, C. H.; Kim, S. K.; Hwang, C. S. ACS Appl Mater Interfaces 2014, 6 (24), 22474-82.

Plutenko, T. A.; V′yunov, O. I.; Belous, A. G. Inorg. Mater. 2012, 48 (12), 1183-1189.

Chen, M.; Liu, Z. L.; Wang, Y.; Wang, C. C.; Yang, X. S.; Yao, K. L. Phys. B 2004, 352 (1-4), 61-65.

Chen, X. Q.; Yang, F. J.; Cao, W. Q.; Wang, H.; Yang, C. P.; Wang, D. Y.; Chen, K. Solid State Commun. 2010, 150 (27-28), 1221-1224.

Cheng, Z. X.; Li, A. H.; Wang, X. L.; Dou, S. X.; Ozawa, K.; Kimura, H.; Zhang, S. J.; Shrout, T. R. J. Appl. Phys. 2008, 103 (7), 07E507.

Shimizu, T.; Yokouchi, T.; Oikawa, T.; Shiraishi, T.; Kiguchi, T.; Akama, A.; Konno, T. J.; Gruverman, A.; Funakubo, H. Appl. Phys. Lett. 2015, 106 (11), 112904.

Noguchi, Y.; Yamamoto, K.; Kitanaka, Y.; Miyayama, M. J. Eur. Ceram. Soc. 2007, 27 (13-15), 4081-4084.

Kolodiazhnyi, T. J. Phys. chem. Solids 2003, 64, 953-960.

Chang, Y.; Kingery, W. D. Defects in Ceramics, J. Wiley 1997, 129-130.

Noguchi, Y.; Goto, T.; Miyayama, M.; Hoshikawa, A.; Kamiyama, T. J. Electroceram. 2007, 21 (1-4), 49-54.

Chen, M.; Huang, K.-l.; Mei, X.-a.; Huang, C.-q.; Liu, J.; Cai, A.- h. Trans. Nonferrous Met. Soc. China 2009, 19 (1), 138-142.

Chiu, H.-C.; Wu, C.-H.; Chi, J.-F.; Chien, F.-T. Microelectron. Reliab. 2014, 54 (6-7), 1282-1287.

Murugaraj, P. J. Mater. Sci. Lett 1986, 5, 171-173.

Jakes, P.; Erdem, E.; Eichel, R.-A.; Jin, L.; Damjanovic, D. Appl. Phys. Lett. 2011, 98 (7), 072907.

Zhang, Z. H.; Wu, S. Y.; Kuang, M. Q.; Song, B. T. Eur. Phys. J.: Appl. Phys. 2011, 56 (1), 10303.

Eichel, R. A. Phys Chem Chem Phys 2011, 13 (2), 368-84.

Shelef, A. J. Catal. 2000, 195, 106-112.

Issa, M. A.; Dughaish, Z. H. J. Phys. D: Apple. Phys 1984, 17, 2037-2047.

Glinchuk, M. D.; Kornienko, S. M.; Laguta, V. V.; Slipenyuk, A. M.; Bilous, A. G.; V′yunov, O. I.; Yanchevskii, O. Z. J. Mater. Chem. 2000, 10, 941-947.

Kornienko, M.; Glinchuk, M. D.; Laguta, V.V.; Belous, A. G.; Yastrabik, L. Phys. Solid State 1999, 41, 1838-1842.

DOI: http://dx.doi.org/10.29356/jmcs.v61i4.462


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Journal of the Mexican Chemical Society (J. Mex. Chem. Soc.) Vol 62, No 2 (2018). Quarterly publication (April-June). Edited and distributed by Sociedad Química de México, A.C. Barranca del Muerto 26, Col. Crédito Constructor, Del. Benito Juárez, C.P. 03940, Mexico City. Phone: +5255 56626837; +5255 56626823 Contact: soquimex@sqm.org.mx http://www.sqm.org.mx Editor-in-Chief: Ignacio González-Martínez. Indexed Journal. Certificate of reserved rights for recurrent publications under digital distribution granted by the Instituto Nacional del Derecho de Autor (INDAUTOR): 04-2018-091118040000-203. Certificate of lawful title and content: Under procedure. ISSN-e granted by the Instituto Nacional del Derecho de Autor (INDAUTOR): 2594-0317. ISSN granted by the Instituto Nacional del Derecho de Autor (INDAUTOR): 1870-249X. Postal registration of printed matter deposited by editors or agents granted by SEPOMEX: IM09-0312 Copyright © Sociedad Química de México, A.C. Total or partial reproduction is prohibited without written permission of the right holder. The Figures/schemes quality and the general contents of this publication are full responsibility of the authors. Updated December 12th, 2018 by Adriana Vázquez (editorial assistant, e-mail: editor.jmcs@gmail.com), J. Mex. Chem. Soc., Sociedad Química de México, A.C.